Ab inito study of GaN properties using VASP software packageKlopov, Mihhail; Kuusk, Ahto; Velmre, Enn; Udal, AndresBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 55-58 : ill

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Excitonic emission in heavily Ga-doped zinc oxide films grown on GaNShtepliuk, I.; Khranovskyy, D.; Gogova, D.; Danilson, Mati; Krunks, MalleJournal of luminescence2020 / art. 117265, 10 p. : ill https://doi.org/10.1016/j.jlumin.2020.117265 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Experimental evaluation of GaN gate injection transistorsRabkowski, Jacek; Barlik, RomanPrzeglad elektrotechniczny = Electrical review2015 / p. 9-12 : ill http://dx.doi.org/10.15199/48.2015.03.03

Study of radiative recombination influence in GaN and GaAs bipolar transistor structuresVelmre, Enn; Udal, Andres; Verbitski, IrinaBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 59-62 : ill