Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Dolgov, Sergei; Onufrijevs, Pavels; Dauksta, EdvinsGettering and Defect Engineering in Semiconductor Technology XV2014 / p. 352-357 : ill https://doi.org/10.4028/www.scientific.net/SSP.205-206.352 Conference proceedings at Scopus Article at Scopus Conference proceedings at WOS Article at WOS Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Laas, Tõnu; Medvid, Arthur; Onufrijevs, Pavels; Dauksta, EdvinsSolid state phenomena2011 / p. 259-262