Ambient temperature influence on current suppressing effect caused by self-heating phenomenon at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 253-254: ill

An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill

An experimental study of diffusion welded contacts to p-type silicon carbideKorolkov, OlegTelekommunikatsioon 2002 : IX rahvusvahelise telekommunikatsioonipäeva materjalid2002 / lk. 21-23 : ill

Analysis of barrier inhomogeneities of P-type Al/4H-SiC Schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan Materials science forum2020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960 Conference proceedings at Scopus Article at Scopus

Analysis of the basic Schottky parameters for diffusion-welded aluminium contacts to p- and n-type SiCKorolkov, Oleg; Ljutov, Jevgeni; Kuznetsova, Natalja; Ruut, Jana; Rang, ToomasBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 51-53 : ill

The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill

Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est https://doi.org/10.23658/taltech.52/2021

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa https://doi.org/10.23658/taltech.6/2021

Charge carrier transport in SiC Schottky interfaces : shape factor approachKurel, Raido; Rang, Toomas; Rang, Galina; Kasemaa, ArgoBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 87-90 : ill

Clamp mode package diffusion welded power SiC Schottky diodesKorolkov, Oleg; Kuznetsova, Natalja; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 55-58 : ill

Combustion synthesis of nanoscale boron and silicon carbidesZakaryan, Marieta; Amirkhanyan, Narine; Kirakosyan, Hasmik; Zurnachyan, Alina; Aydinyan, SofiyaCIMTEC 2022 : 15th International Ceramics Congress (June 20-24) CIMTEC 2022 : 9th Forum on New Materials (June 25-29)2022 http://2022.cimtec-congress.org/focused-session-ca-11_1

Combustion synthesis of silicon carbide by magnesio-carbothermic reduction of amorphous and crystalline silicaKirakosyan, Hasmik; Nazaretyan, Khachik; Beglaryan, Hayk; Ivanov, Roman; Hussainova, Irina; Aydinyan, SofiyaProceedings of the Estonian Academy of Sciences2025 / p. 260-265 https://doi.org/10.3176/proc.2025.2.31

Comparative characteristics of 6H- and 4H-SiC surfaces in diffusion weldingKorolkov, Oleg; Rang, ToomasProceedings of the Estonian Academy of Sciences. Engineering2001 / 4, p. 347-353 : ill

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion weldingSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 81-84 : ill

Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbideKuznetsova, NataljaInfo- ja kommunikatsioonitehnoloogia doktorikooli IKTDK teise aastakonverentsi artiklite kogumik : 11.-12. mai 2007, Viinistu kunstimuuseum2007 / lk. 162-165 : ill

Comparison of Si and SiC devices surge current capability by means of numerical simulationsVelmre, Enn; Udal, AndresBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 77-80: ill

Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulationRang, Toomas; Kurel, RaidoProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 173-178

Complementary multi guard ring JBS structures : numerical analysisKoel, Ants; Rang, Toomas; Rang, GalinaBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 85-88 : ill

Contact manufacturing technologies for wide band-gap semiconductor materials (invited)Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 17-28: ill

Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, Andres18th Nordic Semiconductor Meeting, Linköping, June 7-10, 1998 : abstracts1998 / p. F-88: ill https://iopscience.iop.org/article/10.1238/Physica.Topical.079a00193

Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, AndresPhysica scripta1999 / p. 193-197 : ill https://ui.adsabs.harvard.edu/abs/1999PhST...79..193V/abstract http://doi.org/10.1238/Physica.Topical.079a00193

Current crowding phenomenon in JBC structuresRang, Toomas; Kurel, Raido; Higelin, G.; Poirier, LaurentComputer Methods and Experimental Measurements for Surface Effects and Contact Mechanics VII2005 / p. 387-396 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/49/15383

Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contactsRang, Toomas; Blum, AlfonsBEC'96 : the 5th Biennial Baltic Electronics Conference, October 7-11, 1996, Tallinn, Estonia : proceedings1996 / p. 81-84: ill

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447 Conference proceedings at Scopus Article at Scopus

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48

Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Final programm of the 12th International Conference on Silicon Carbide and Related Materials : ICSCRM2005 : Pittsburgh, PA, USA2005 / p. 71

Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922

Diffusion welding technology for 6H-SiC substratesKorolkov, Oleg; Rang, ToomasBEC'98 : the 6th Biennial Conference on Electronics and Microsystems Technology, October 7-9, 1998, Tallinn, Estonia : proceedings1998 / p. 251-252: ill

DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctionsIvanov, Pavel; Korolkov, Oleg; Samsonova, Tatyana; Sleptšuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, ToomasMaterials science forum2011 / p. 409-412 https://www.researchgate.net/publication/272046403_DLTS_measurements_on_4H-SiC_JBS-diodes_with_boron_implanted_local_p-n_junctions

Dry reciprocating sliding wear behaviour of alumina–silicon carbide nanocomposite fabricated by ceramic injection moldingSmirnov, Anton; Bartolome, Jose F.; Moya, J.S.; Kern, F.; Gadow, R.Journal of the European Ceramic Society2011 / p. 469-474 : ill

Effect of milling time on dual-nanoparticulate-reinforced aluminum alloy matrix composite materialsKwon, Hansang; Saarna, Mart; Yoon, Songhak; Weidenkaff, Anke; Leparoux, MarcMaterials science and engineering : A2014 / p. 338-345 https://doi.org/10.1016/j.msea.2013.10.046 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Effect of Si addition on microstructure and mechanical properties of SiC ceramic fabricated by direct LPBF with CVI technologyWang, Yipu; Wang, Pei; Li, Liqun; Zhang, Jian; Zhang, Yulei; Peng, Jin; Wang, Xingxing; Kang, Nan; El Mansori, Mohamed; Prashanth, Konda GokuldossApplied sciences2025 / art. 8585 https://doi.org/10.3390/app15158585

Electron microscopy study of contact layers in n-type 4H-SiC after diffusion weldingKorolkov, Oleg; Sleptšuk, Natalja; Sitnikova, A.; Rang, ToomasBEC 2008 : 2008 International Biennial Baltic Electronics Conference : proceedings of the 11th Biennial Baltic Electronics Conference : Tallinn University of Technology : October 6-8, 2008, Tallinn, Estonia2008 / p. 91-94 : ill

Electro-thermal simulations and forward surge current failure prediction for SiC diodesVelmre, Enn; Udal, AndresProgram of 17th Nordic Semiconductor Meeting, Trondheim, Norwey, June 17-20, 19961996 / p. 28

Experimental study of surface distortions in silicon carbide caused by diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 53-56 : ill

Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill https://doi.org/10.1109/IECON.2013.6700115 Conference Proceedings at Scopus Article at Scopus

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 603-606 : ill

Formation of large area Al contacts on 6H- and 4H-SiC substratesKorolkov, Oleg; Rang, ToomasAbstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 188 https://www.scientific.net/MSF.353-356.603

Generalized analytical model for SiC polytypic heterojunctionsRang, Toomas; Tabun, Indrek; Rang, Galina; Koel, AntsEstonian journal of engineering2011 / 2, p. 151-157 : ill

Grid-frequency Vienna rectifier and isolated current-source DC-DC converters for efficient off-board charging of electric vehiclesRabkowski, Jacek; Blinov, Andrei; Zinchenko, Denys; Wrona, Grzegorz; Zdanowski, Mariusz2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France, 7-11 Sept. 20202020 / 10 p. : ill https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215772

Hardness of hot consolidated Al-SiC nanocomposites from planetary milled powdersKollo, Lauri; Leparoux, Marc; Bradbury, Christopher R.; Kommel, Lembit; Carreno-Morelli, Efrain; Rodriguez-Arbaizar, M.World PM2010 proceedings. Vol. 1, Powder Manufacturing and Processing, Miniaturization and Nanotechnology, Powder Pressing2010 / p. 341-346 https://www.researchgate.net/publication/272160715_Hardness_of_Hot_Consolidates_Al-SiC_Nanocomposites_from_Planetary_Milled_Powders

High phonon-drag thermoelectric efficiency of SiC at low temperaturesVelmre, Enn; Udal, Andres; Grivickas, VytautasFinal program of the 10th International Conference on SiC and Related Materials : ICSCRM'2003 : Lyon, France, Oct. 5-10, 20032003 / p. ThP4-13 https://www.researchgate.net/publication/240834700_High_Phonon-Drag_Thermoelectric_Efficiency_of_SiC_at_Low_Temperatures

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73

High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modulesColmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on industry applications2015 / p. 4664-4676 : ill http://dx.doi.org/10.1109/TIA.2015.2456422

Highly active Fe-N/C oxygen electrocatalysts based on silicon carbide derived carbonTeppor, Patrick; Jäger, Rutha; Hints, J.; Volobujeva, Olga; Valk, Peeter; Koppel, Miriam; Lust, EnnPolymer Electrolyte Fuel Cells & Electrolyzers 20 (PEFC & E 20)2020 / p. 607 - 615 https://doi.org/10.1149/09809.0607ecst Conference Proceedings at Scopus Article at Scopus

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill https://doi.org/10.4028/www.scientific.net/MSF.858.790 Conference Proceedings at Scopus Article at Scopus

Impact of phonon drag effect on Seebeck coefficient in p-6H-SiC : experiment and simulationBikbajevas, V.; Grivickas, Vytautas; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, Paulius; Syväjärvi, Mikael; Yakimova, RositzaMaterials science forum2003 / p. 407-410 https://www.scientific.net/MSF.433-436.407 https://doi.org/10.4028/www.scientific.net/MSF.433-436.407

Impact of phonon-drag effect on Seebeck coefficient in SiC : experiment and simulationBikbajevas, V.; Grivickas, V.; Stölzer, M.; Velmre, Enn; Udal, AndresAbstracts of the Lithuanian National Physics Conference : LNPK-34 : Vilnius, 20032003 / p. 219 http://www.diva-portal.org/smash/record.jsf?pid=diva2%3A269444&dswid=8596

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

Intermediate layer in the metal-silicon carbide contact : investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion weldinSleptšuk, Natalja2012 https://www.amazon.com/Intermediate-Layer-Metal-Silicon-Carbide-Contact/dp/3848422239

Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184

Investigation of additional states in the silicon carbide surface after diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 356 : ill https://www.researchgate.net/publication/269377410_Investigation_of_Additional_States_in_the_Silicon_Carbide_Surface_after_Diffusion_Welding

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix compositesKollo, Lauri; Leparoux, Marc; Bradbury, Christopher R.; Jäggi, Christian; Carreno-Morelli, Efrain; Rodriguez-Arbaizar, MikelJournal of alloys and compounds2010 / p. 394-400 : ill https://www.sciencedirect.com/science/article/abs/pii/S0925838809018738

Investigation of silicon carbide diode structures via numerical simulations including anisotropic effectsVelmre, Enn; Udal, Andres; Masszi, F.; Nordlander, E.Simulation of semiconductor devices and processes. Vol. 61995 / p. 340-343: ill https://link.springer.com/chapter/10.1007/978-3-7091-6619-2_83

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

Large area high quality interfaces to SiC substrates - technology and modellingRang, Toomas; Korolkov, Oleg; Kurel, Raido; Pikkov, MihhailMaterials mechanics, fracture mechanics, micro mechanics1999 / p. 574-579: ill

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Measurement of charge carrier lifetime temperature dependence in 4H-SiC power diodesVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 394, 2 p https://www.researchgate.net/publication/240833834_Measurement_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Power_Diodes

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / p. 144-154 : ill https://artiklid.elnet.ee/record=b1004044*est

Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 Conference proceeding at Scopus Article at Scopus

Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill https://doi.org/10.2495/MC170241 Conference proceedings at Scopus Article at Scopus

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill https://doi.org/10.2495/MC170061 Conference proceedings at Scopus Article at Scopus

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

Numerical investigation of SiC devices performance considering the incomplecte dopant ionizationVelmre, Enn; Udal, AndresSilicon carbide and related materials 20052006 / p. 1383-1386 https://www.scientific.net/MSF.527-529.1383

Numerical simulation of a silicon carbide diodeVelmre, Enn; Udal, AndresBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 559-566: ill https://www.ester.ee/record=b2150914*est

Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976

Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489

Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045

On dead-time optimization and active gate driving in flyback converters with synchronous rectifiersPhilipps, Daniel; Blinov, Andrei; Peftitsis, DimosthenisIEEE Access2024 / p. 173146-173155 https://doi.org/10.1109/ACCESS.2024.3462956 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Oxidation-abrasion of TiC-based cermets in SiC mediumAntonov, Maksim; Hussainova, Irina; Kübarsepp, Jakob; Traksmaa, RainerWear2011 / p. 23-31 : ill

Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf

Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode modelPikkov, MihhailThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 321-322 : ill

Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill

Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill

Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfacesKurel, Raido; Rang, ToomasProceedings of the 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary1998 / p. 88-91 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010

Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/22/5010

Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling ApproachAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Aydinyan, SofiyaEC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 20212021 / p. 118

SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697 Conference proceedings at Scopus Article at Scopus

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

SiC-diodes forward surge current failure mechanisms : experiment and simulationVelmre, Enn; Udal, AndresESREF'97 : proceedings of the 8th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct. 7-10, 1997, Bordeaux, France1997 / p. 1671-1674 https://www.sciencedirect.com/science/article/abs/pii/S0026271497001364

Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

Sintering of silicon carbide obtained by combustion synthesisAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Rodriguez, Miguel Angel; Abovyan, L.; Aydinyan, SofiyaCeramics international2023 / p. 26129-26134 https://doi.org/10.1016/j.ceramint.2023.04.233 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide

Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 Conference Proceedings at Scopus Article at Scopus Article at WOS

Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596

The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 395, 2 p https://www.researchgate.net/publication/250338907_A_Theoretical_Study_of_Electron_Drift_Mobility_Anisotropy_in_n-Type_4H-and_6H-SiC

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresMaterials science forum2000 / p. 725-728

Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effectGrivickas, Vytautas; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, Paulius; Syväjärvi, Mikael; Yakimova, Rositza; Bikbajevas, V.Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 491-494 : ill https://www.researchgate.net/publication/240833914_Thermopower_Measurements_in_4H-SiC_and_Theoretical_Calculations_Considering_the_Phonon_Drag_Effect

Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 144

Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356

Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill

Исследование p-n-переходов на основе 4H-SiC, изготовленных имплантацией бора, методом нестационарной емкостной спектроскопииIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaФизика и техника полупроводников2011 / с. 1358-1362 : ил

Низкотемпературный отжиг слаболегированных слоев n-4H-SiC после облучения быстрыми электронамиKorolkov, Oleg; Kozlovski, Vitali; Lebedev, Alexander; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasФизика и техника полупроводников2019 / с. 991-994 https://doi.org/10.21883/FTP.2019.07.47879.9089