• A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2011 / p. 1306-1310 : ill https://doi.org/10.1134/S1063782611100101
• Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Medvid, A.Materials science and engineering : B2006 / p. 222-226 : ill https://www.sciencedirect.com/science/article/pii/S0921510706004375
• Investigation of strain relaxion mechanism in Si-SiO2 system during the process of its formationKropman, Daniel; Poll, V.; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Arbu, Uno; Paomets, V.Physica status solidi (a)2003 / 2, p. 297-301 https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.200306611
• Simulations of wide bandgap SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, Tamas2020 IEEE International Conference on Consumer Electronics (ICCE), Las Vegas, NV, USA, January 4-6, 20202020 / 4 p https://doi.org/10.1109/ICCE46568.2020.9043130
• Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Volobujeva, Olga; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.20082008 / p. 204-207 https://www.sciencedirect.com/science/article/pii/S0921452609010321
• Structure-reactivity relationships for organosilicon compounds revisitedPloom, Anu; Tuulmets, AntsISOS XVII Berlin 2014 : the 17th International Symposium on Silicon Chemistry jointly with the 7th European Silicon Days : Berlin, August 3-8, 20142014
• Structure-reactivity relationships in organosilicon chemistry revisitedPloom, Anu; Tuulmets, Ants; Järv, JaakCentral European journal of chemistry2011 / p. 2910-916 https://link.springer.com/article/10.2478/s11532-011-0075-x
• Зависимость между содержанием P2O5 и SiO2 в оболовых фосфоритахVeiderma, MihkelСборник статей по химии и химической технологии. 101964 / с. 299-304 : илл https://www.ester.ee/record=b2181961*est https://digikogu.taltech.ee/et/Item/9569e6db-150a-42c8-bf3b-765725dfd969
• Создание и свойства высокоомных эпитаксиальных слоев кремния большой площадиVinnal, J.A.; Kõverik, Kait; Tarma, M.Тезисы докладов республиканской научно-технической конференции, посвященной 80-летию со дня изобретения радио А. С. Поповым1975 / с. 3 https://www.ester.ee/record=b1322122*est