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• Decoding the atomic structure of Ga2Te5 pulsed laser deposition films for memory applications using diffraction and first-principles simulationsTverjanovich, Andrey; Benmore, Chris J.; Khomenko, Maxim; Sokolov, Anton; Fontanari, Daniele; Bereznev, Sergei; Bokova, Maria; Kassem, Mohammad; Bychkov, EugeneNanomaterials2023 / art. 2137 https://doi.org/10.3390/nano13142137 https://www.scopus.com/sourceid/21100253674 https://www.scopus.com/record/display.uri?eid=2-s2.0-85166176019&origin=inward&txGid=565a116c19610d8c0f59b317907bb070 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=NANOMATERIALS-BASEL&year=2023 https://www.webofscience.com/wos/woscc/full-record/WOS:001038915400001
• Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converterBlinov, Andrei; Kosenko, Roman; Chub, Andrii2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON) : May 29 - June 2, 2017, Kyiv, Ukraine : conference proceedings2017 / p. 544-547 : ill https://doi.org/10.1109/UKRCON.2017.8100299
• Excitonic emission in heavily Ga-doped zinc oxide films grown on GaNShtepliuk, I.; Khranovskyy, D.; Gogova, D.; Danilson, Mati; Krunks, MalleJournal of luminescence2020 / art. 117265, 10 p. : ill https://doi.org/10.1016/j.jlumin.2020.117265 https://www.scopus.com/sourceid/12179 https://www.scopus.com/record/display.uri?eid=2-s2.0-85082799279&origin=inward&txGid=2611f388333bcbe7de1a834f5f4db1c0 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=J%20LUMIN&year=2022 https://www.webofscience.com/wos/woscc/full-record/WOS:000542431700017
• Experimental evaluation of GaN gate injection transistorsRabkowski, Jacek; Barlik, RomanPrzeglad elektrotechniczny = Electrical review2015 / p. 9-12 : ill http://dx.doi.org/10.15199/48.2015.03.03
• Modeling of photon recycling in GaN-devicesVelmre, Enn; Udal, Andres; Klopov, MihhailSilicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31-September 4, 2004, Bologna, Italy2005 / p. 1039-1042 : ill https://www.researchgate.net/publication/250344144_Modeling_of_Photon_Recycling_in_GaN-Devices
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• Study of radiative recombination influence in GaN and GaAs bipolar transistor structuresVelmre, Enn; Udal, Andres; Verbitski, IrinaBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 59-62 : ill