• Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Dolgov, Sergei; Onufrijevs, Pavels; Dauksta, EdvinsGettering and Defect Engineering in Semiconductor Technology XV2014 / p. 352-357 : ill https://doi.org/10.4028/www.scientific.net/SSP.205-206.352 https://www.scopus.com/sourceid/21100305259 https://www.scopus.com/record/display.uri?eid=2-s2.0-84886782662&origin=inward&txGid=689574b4b5c8f661d063627c2f2df3e1 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SOLID%20STATE%20PHENOM&year=2005 https://www.webofscience.com/wos/woscc/full-record/WOS:000336338000051
• Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laserMedvid, A.; Onufrijevs, Pavels; Mellikov, Enn; Kropman, Daniel; Muktepavela, F.; Bakradze, G.Journal of non-crystalline solids2007 / p. 703-707 : ill https://www.sciencedirect.com/science/article/pii/S0022309306014116
• Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Laas, Tõnu; Medvid, Arthur; Onufrijevs, Pavels; Dauksta, EdvinsSolid state phenomena2011 / p. 259-262
• Understanding and control of stress at Si-SiO2 interfaceKropman, Daniel; Seeman, Viktor; Medvids, Arturs; Onufrijevs, Pavels; Vitusevich, Svetlana; Mikli, ValdekKey engineering materials2020 / p. 291−296 https://doi.org/10.4028/www.scientific.net/KEM.850.291 https://www.scopus.com/sourceid/12378 https://www.scopus.com/record/display.uri?eid=2-s2.0-85088298651&origin=inward&txGid=57d66fc6d526d749bfec9d1fdbf4390a