• Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85071874502&origin=inward&txGid=a726a88a134fd68a3198db192e8c9ce6
• Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electronsKozlovski, Vitali V.; Korolkov, Oleg; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, NataljaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 231-236 https://doi.org/10.4028/www.scientific.net/MSF.1004.231 https://www.scopus.com/sourceid/28700 https://www.scopus.com/record/display.uri?eid=2-s2.0-85089817325&origin=resultslist&sort=plf-f&src=s&sid=a6fb1194242752ab2b252272d233250c&sot=b&sdt=b&s=TITLE-ABS-KEY%28%22comparative+results+of+low+temperature%22%29&sl=23&sessionSearchId=a6fb1194242752ab2b252272d233250c&relpos=0