• Dedicated to the memory of Prof. M. Sheinkman effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Dolgov, Sergei; Onufrijevs, Pavels; Dauksta, EdvinsGettering and Defect Engineering in Semiconductor Technology XV2014 / p. 352-357 : ill https://doi.org/10.4028/www.scientific.net/SSP.205-206.352 https://www.scopus.com/sourceid/21100305259 https://www.scopus.com/record/display.uri?eid=2-s2.0-84886782662&origin=inward&txGid=689574b4b5c8f661d063627c2f2df3e1 https://jcr.clarivate.com/jcr-jp/journal-profile?journal=SOLID%20STATE%20PHENOM&year=2005 https://www.webofscience.com/wos/woscc/full-record/WOS:000336338000051
• Effect of ultrasonic treatment on the defect structure of the Si-SiO2 systemKropman, Daniel; Seeman, Viktor; Dolgov, Sergei; Medvids, ArtursPhysica Status Solidi (C) Current Topics in Solid State Physics2016 / p. 793 - 797 https://doi.org/10.1002/pssc.201600052 https://www.scopus.com/sourceid/4700152710 https://www.scopus.com/record/display.uri?eid=2-s2.0-84992646936&origin=resultslist&sort=plf-f&src=s&sid=50973f8aeb3d1c19e096d56f835e7904&sot=b&sdt=b&s=DOI%2810.1002%2Fpssc.201600052%29&sl=35&sessionSearchId=50973f8aeb3d1c19e096d56f835e7904&relpos=0 https://www.webofscience.com/wos/woscc/full-record/WOS:000399448900018