• Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill https://doi.org/10.5755/j01.eee.19.10.5903 https://www.scopus.com/sourceid/19900193212 https://www.scopus.com/record/display.uri?eid=2-s2.0-84890763964&origin=resultslist&sort=plf-f&src=s&sot=b&sdt=b&s=DOI%2810.5755%2Fj01.eee.19.10.5903%29&sessionSearchId=426c7384f2dd8d6106bcca8e9e61ed2b https://jcr.clarivate.com/jcr-jp/journal-profile?journal=ELEKTRON%20ELEKTROTECH&year=2013 https://www.webofscience.com/wos/woscc/full-record/WOS:000330689000022
  • Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; SleptÅ¡uk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill
  • Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysisToompuu, Jana; SleptÅ¡uk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est