Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes
author
statement of authorship
Andres Udal and Enn Velmre
source
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
location of publication
[S. l.]
publisher
year of publication
pages
p. 781-784
subject term
TalTech department
language
inglise
Udal, A., Velmre, E. Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 781-784.