Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate
author
Abashkina, S.
Rimshans, J.
Korolkov, V.I.
Tabarov, T.
statement of authorship
Abashkina S., Rimshans J. and Korolkov V., Tabarov T
source
Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University
location of publication
Tallinn
year of publication
1992
pages
p. 83-88: ill
subject term
transistorid
siirdeprotsessid
mahtuvus (elektrotehnika)
elektritakistus
arvutusmeetodid
notes
Bibl. 3 ref
review
Kokkuvõte: Vertikaalse foto-väljatransistori siirdekarakteristikute numbriline modelleerimine koos tüürahela takistuse arvestamisega
language
inglise