Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate

author
Abashkina, S.
Tabarov, T.
statement of authorship
Abashkina S., Rimshans J. and Korolkov V., Tabarov T
location of publication
Tallinn
year of publication
pages
p. 83-88: ill
notes
Bibl. 3 ref
review
Kokkuvõte: Vertikaalse foto-väljatransistori siirdekarakteristikute numbriline modelleerimine koos tüürahela takistuse arvestamisega
language
inglise