Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuits

author
Ishevsky, D.V.
statement of authorship
A.N.Bubennikov, D.V.Ishevsky
location of publication
Tallinn
year of publication
pages
p. 26-31: ill
notes
Bibl. 6 ref
review
Kokkuvõte: Skaleeritud bipolaarseadiste ja -lülituste läbitorke, tunnel- ja kiiretoimelisuse karakteristikute kompleksne simuleerimine
language
inglise