A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
author
Velmre, Enn
Udal, Andres
statement of authorship
Enn Velmre, Andres Udal
source
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
location of publication
[S.l.]
year of publication
1999
pages
paper no 395, 2 p
conference name, date
International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999
conference location
Research Triangle Park, North-Carolina, USA
url
https://www.researchgate.net/publication/250338907_A_Theoretical_Study_of_Electron_Drift_Mobility_Anisotropy_in_n-Type_4H-and_6H-SiC
subject term
anisotroopia
hajumine
elektronid
liikumine
ränikarbiid
ISSN
0255-5476
TalTech department
elektroonikainstituut
language
inglise