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Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT

author
Kurel, Raido
Udal, Andres
statement of authorship
Raido Kurel and Andres Udal
source
BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia
location of publication
Tallinn
publisher
[Tallinn Technical University]
year of publication
2002
pages
p. 51-54 : ill
subject term
ränikarbiid
Schottky barjäär
elektrikontaktid
pooljuhid
ISBN
9985-59-292-1
notes
Bibliogr.: 13 ref
TalTech department
elektroonikainstituut
language
inglise
Kurel, R., Udal, A. Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DT // BEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia. Tallinn : [Tallinn Technical University], 2002. p. 51-54 : ill.