print

Performance benchmarking of Si and GaN MOSFETs in isolated buck-boost DC-DC converter

author
Mashinchi Maheri, Hamed
Vinnikov, Dmitri
Rahman, Showrov
statement of authorship
Hamed Mashinchi Maheri, Dmitri Vinnikov, and Showrov Rahman
source
2021 IEEE 62nd International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON), 15-17 Nov. 2021 : conference proceedings
publisher
IEEE
year of publication
2021
pages
p. 1-6 : ill
conference name, date
2021 IEEE 62nd International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON), 15-17 Nov. 2021
conference location
Riga
url
https://doi.org/10.1109/RTUCON53541.2021.9711696
subject term
muundurid
alalispingemuundurid
efektiivsus
elektrotehnika
võrdlevuuringud
keyword
GaN system
impedance-source converters
quasi-Z-source
dc-dc converters
power losses
efficiency
ISBN
78-1-6654-3804-9
notes
Bibliogr.: 18 ref
scientific publication
teaduspublikatsioon
TTÜ department
elektroenergeetika ja mehhatroonika instituut
language
inglise
Uurimisrühm
Power electronics group
Mashinchi Maheri, H., Vinnikov, D., Rahman, S. Performance benchmarking of Si and GaN MOSFETs in isolated buck-boost DC-DC converter // 2021 IEEE 62nd International Scientific Conference on Power and Electrical Engineering of Riga Technical University (RTUCON), 15-17 Nov. 2021 : conference proceedings. : IEEE, 2021. p. 1-6 : ill. https://doi.org/10.1109/RTUCON53541.2021.9711696