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51

book article

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes

book article

52

dissertation

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertation

53

journal article

Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix compositesKollo, Lauri; Leparoux, Marc; Bradbury, Christopher R.; Jäggi, Christian; Carreno-Morelli, Efrain; Rodriguez-Arbaizar, MikelJournal of alloys and compounds2010 / p. 394-400 : ill https://www.sciencedirect.com/science/article/abs/pii/S0925838809018738

journal article

54

book article

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

book article

55

book article

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

book article

56

dissertation

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertation

57

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

book article

58

book article

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

book article

59

journal article

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

journal article

60

journal article

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

journal article

61

journal article EST / journal article ENG

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

62

journal article EST / journal article ENG

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

63

journal article

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill https://artiklid.elnet.ee/record=b1004044*est

journal article

64

book article

Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf

book article

65

book article EST / book article ENG

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus

book article EST / book article ENG

66

book article EST / book article ENG

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357 Conference proceeding at Scopus Article at Scopus

book article EST / book article ENG

67

book article

Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbideRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Gähwiler, Reto; Grosberg, Martin; Jõemaa, RaunoMaterials and contact characterisation VIII2017 / p. 235-248 : ill http://dx.doi.org/10.2495/MC170241

book article

68

book article

Non-destructive eddy current measurments for silicon carbide heterostructure analysisSahakyan, Armen; Koel, Ants; Rang, ToomasMaterials and contact characterisation VIII2017 / p. 49-60 : ill http://dx.doi.org/10.2495/MC170061

book article

69

book article

Numerical analysis of the influence of deep energy level traps in SiC Schottky structuresKoel, Ants; Rang, Toomas; Rang, GalinaHigh performance structure and materials. VI2012 / p. 439-448 : ill

book article

70

book article

Numerical investigation of SiC devices performance considering the incomplecte dopant ionizationVelmre, Enn; Udal, AndresSilicon carbide and related materials 20052006 / p. 1383-1386 https://www.scientific.net/MSF.527-529.1383

book article

71

book article

Numerical simulation of a silicon carbide diodeVelmre, Enn; Udal, AndresBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 559-566: ill https://www.ester.ee/record=b2150914*est

book article

72

book article

Numerical simulation of P-type Al/4H-SiC Schottky barrier diodes [Online resource]Ziko, Mehadi Hasan; Koel, Ants; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600976

book article

73

book article

Numerical simulations of wideband SiC N-N heterostructure diodePatankar, Udayan Sunil; Koel, Ants; Pardy, TamasLAEDC 2020 : Latin American Electron Devices Conference, San José, Costa Rica, February 25-28, 20202020 / 4 p https://doi.org/10.1109/LAEDC49063.2020.9073489

book article

74

book article

Numerical study of current crowding phenomenon in complementary 4H-SiC JBS rectifiersRang, Toomas; Higelin, G.; Kurel, RaidoSilicon Carbide and Related Materials 20032004 / p. 1045-1048 https://www.scientific.net/MSF.457-460.1045

book article

75

journal article

Oxidation-abrasion of TiC-based cermets in SiC mediumAntonov, Maksim; Hussainova, Irina; Kübarsepp, Jakob; Traksmaa, RainerWear2011 / p. 23-31 : ill

journal article

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