Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing

vastutusandmed
Oleg Korolkov, Vitali V. Kozlovski, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk and Toomas Rang
ilmumiskoht
Zurich
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 734-737
konverentsi nimetus, aeg
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
konverentsi toimumispaik
Birmingham, UK
kvartiil
Q4
ISSN
0255-5476
ISBN
978-303571332-9
märkused
Bibliogr.: 9 ref
teaduspublikatsioon
teaduspublikatsioon
klassifikaator
3.1
keel
inglise
Korolkov, O., Kozlovski, V.V., Lebedev, A.A., Toompuu, J., Sleptsuk, N., Rang, T. Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing // Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 734-737. (Materials science forum ; 963). https://doi.org/10.4028/www.scientific.net/MSF.963.734