A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
autor
vastutusandmed
Enn Velmre, Andres Udal
ilmumiskoht
[S.l.]
ilmumisaasta
leheküljed
paper no 395, 2 p
konverentsi nimetus, aeg
International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999
konverentsi toimumispaik
Research Triangle Park, North-Carolina, USA
ISSN
0255-5476
TTÜ struktuuriüksus
keel
inglise
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA. [S.l.], 1999. paper no 395, 2 p.