Study of ion implanted Fe depth distribution in Si after pulsed ion beam treatment
autor
vastutusandmed
Ch.Angelov, S.Georgiev, B.Amov, E.Goranova, V.Mikli, I.Dezsi, E.Kotai
ajakirja aastakäik number kuu
9
ilmumisaasta
leheküljed
2, p. 307-310
märksõna
ISSN
1454-4164
keel
inglise
Angelov, Ch., Georgiev, S., Amov, B., Goranova, E., Mikli, V., Dezsi, I., Kotai, E. Study of ion implanted Fe depth distribution in Si after pulsed ion beam treatment // Journal of optoelectronics and advanced materials (2007) 9, 2, p. 307-310. https://www.researchgate.net/publication/289186791_Study_of_the_ion_implanted_Fe_depth_distribution_in_Si_after_pulsed_ion_beam_treatment