prindi

Short-circuit protection circuits for silicon-carbide power transistors

autor
Sadik, Diane-Perle
Colmenares, Juan
Tolstoy, Georg
Rabkowski, Jacek
vastutusandmed
Diane-Perle Sadik, Juan Colmenares, Georg Tolstoy, Dimosthenis Peftitsis, Mietek Bakowski, Jacek Rabkowski, and Hans-Peter Nee
allikas
IEEE transactions on industrial electronics
ajakirja aastakäik number kuu
vol. 63, 4
ilmumisaasta
2016
leheküljed
p. 1995-2004 : ill
leitav
https://doi.org/10.1109/TIE.2015.2506628
märksõna
pooljuhid
bipolaartransistorid
rikked
võtmesõna
bipolar junction transistor (BJT)
driver circuits
failure analysis
fault detection
fault protection
junction field-effect transistor (JFET)
power MOSFET
semiconductor device reliability
short-circuit current
silicon carbide (SiC)
wide-bandgap semiconductors
ISSN
0278-0046
märkused
Bibliogr.: 53 ref
TTÜ struktuuriüksus
elektrotehnika instituut
keel
inglise
Sadik, D.-P., Colmenares, J., Tolstoy, G., Rabkowski, J. et al. Short-circuit protection circuits for silicon-carbide power transistors // IEEE transactions on industrial electronics (2016) vol. 63, 4, p. 1995-2004 : ill. https://doi.org/10.1109/TIE.2015.2506628