Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material

autor
Rajput Priti, J.
Nitnaware, V.N.
vastutusandmed
Rajput Priti J., Udayan S. Patankar, Ants Koel, and V.N. Nitnaware
allikas
International Conference on Inventive Research in Material Science and Technology, ICIRMCT 2018 : March 23-24, 2018
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
art. 020011
seeria-sari
AIP Conference Proceedings ; 1966, 1
konverentsi nimetus, aeg
International Conference on Inventive Research in Material Science and Technology : ICIRMCT 2018 : March 23-24, 2018
konverentsi toimumispaik
Coimbatore, India
ISSN
0094243X
ISBN
978-073541671-0
märkused
Bibliogr.: 24 ref
keel
inglise
Rajput Priti, J., Patankar, U.S, Koel, A., Nitnaware, V.N. Review of - SiC wide-bandgap heterostructure properties as an alternate semiconductor material // International Conference on Inventive Research in Material Science and Technology, ICIRMCT 2018 : March 23-24, 2018. [S.l.] : AIP Publishing, 2018. art. 020011. (AIP Conference Proceedings ; 1966, 1).