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Influence of excitonic scattering on charge carrier ambipolar diffusion in silicon

author
Udal, Andres
Velmre, Enn
statement of authorship
Enn Velmre and Andres Udal
source
ESSDERC'97 : proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997
location of publication
S.l.
publisher
IEEE
year of publication
1997
pages
p. 212-215: ill
conference name, date
The 27th European Solid-State Device Research Conference, 22-24 September 1997
conference location
Stuttgart, Germany
url
https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1503333
https://doi.org////10.1109/ESSDERC.1997.194403
subject term
difusioon (füüsika)
räni
hajumine
mõjud
ISBN
2-86332-221-4
notes
Bibl.: 18 ref
Open Access
Open Access
TalTech department
elektroonikainstituut
language
inglise
Velmre, E., Udal, A. Influence of excitonic scattering on charge carrier ambipolar diffusion in silicon // ESSDERC'97 : proceedings of the 27th European Solid-State Device Research Conference, Stuttgart, Germany, 22-24 September 1997. S.l. : IEEE, 1997. p. 212-215: ill. https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1503333 https://doi.org////10.1109/ESSDERC.1997.194403