full record print

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons

author
statement of authorship
O.M. Korolkov, V.V. Kozlovski, A.A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang
source
publisher
journal volume number month
vol. 53, 7
year of publication
pages
p. 975−978
url
ISSN
1063-7826
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
language
inglise
Reserch Group
Cognitronic lab-on-a-chip research group
Research laboratory for cognitronics
Korolkov, O., Kozlovski, V., Lebedev, A., Sleptsuk, N., Toompuu, J., Rang, T. Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons // Semiconductors (2019) vol. 53, 7, p. 975−978. https://doi.org/10.1134/S1063782619070133