Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects
author
statement of authorship
E.Velmre, A.Udal, F.Masszi and E.Nordlander
source
Simulation of semiconductor devices and processes. Vol. 6
location of publication
Wien
publisher
year of publication
pages
p. 340-343: ill
ISBN
3-2111-82736-6
notes
Bibl. 7 ref
Velmre, E., Udal, A., Masszi, F., Nordlander, E. Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects // Simulation of semiconductor devices and processes. Vol. 6. Wien : Springer, 1995. p. 340-343: ill.