Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
author
Kropman, Daniel
Arbu, Uno
Kärner, T.
Ugaste, Ülo
Mellikov, Enn
Kauk, Marit
Heinmaa, I.
Samoson, Ago
Medvid, A.
statement of authorship
D.Kropman, U.Arbu, T.Kärner, Ü.Ugaste, E.Mellikov, M.Kauk, I.Heinmaa, A.Samoson, A.Medvid
source
Gettering and defect engineering in semiconductor technology. XI
location of publication
[S.l.]
publisher
Elsevier
year of publication
2005
pages
p. 333-338 : ill
url
https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties
subject term
punktdefektid
elektroni paramagnetresonantsspektroskoopia
tuumamagnetresonants
räni
ränioksiid
ISBN
3-908451-13-2
notes
Bibliogr.: 8 ref. (Solid state phenomena, ISSN 1012-0394 ; 108/109)
language
inglise