Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes
statement of authorship
Muhammad Haroon Rashid, Ants Koel, Toomas Rang
source
Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
location of publication
Zurich
publisher
year of publication
pages
p. 357–361
subject term
kvartiil
category (general)
category (sub)
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 10 ref
scientific publication
teaduspublikatsioon
classifier
TTÜ department
language
inglise
Rashid, M. H., Koel, A., Rang, T. Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodes // Silicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 357–361. (Materials science forum ; 963).