Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Mellikov, Enn
Kärner, Tiit
Heinmaa, Ivo
Laas, Tõnu
Londos, Charalampos
Misiuk, Andrzej
statement of authorship
Daniel Kropman, Enn Mellikov, Tiit Kärner, Ivo Heinmaa, Tõnu Laas, Charalampos A. Londos, Andrzej Misiuk
source
Solid state phenomena
journal volume number month
Vol. 178/179
year of publication
2011
pages
p. 263-266
url
https://www.sciencedirect.com/science/article/pii/S0040609009014564
subject term
elektroni paramagnetresonantsspektroskoopia
tuumamagnetresonants
punktdefektid
räni
ränidioksiid
keyword
EPR
NMR
point defect
Si-SiO2 interface
stress relaxation
ISSN
1012-0394
language
inglise