Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties
author
Kropman, Daniel
Kärner, Tiit
Dolgov, Sergei
Heinmaa, Ivo
Laas, Tõnu
Londos, Charalampos
statement of authorship
Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Tõnu Laas, and Charalampos A. Londos
source
Physica status solidi (c)
journal volume number month
Vol. 8, 3
year of publication
2011
pages
p. 694-696 : ill
url
https://www.sciencedirect.com/science/article/pii/S0040609009014564
subject term
punktdefektid
elektroni paramagnetresonantsspektroskoopia
tuumamagnetresonants
räni
ränioksiid
keyword
Si-SiO2 interface
point defects
hydrogen impurities
EPR
NMR
ISSN
1610-1642
notes
Bibliogr.: 6 ref
language
inglise