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Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature

author
statement of authorship
Alexander A. Lebedev, Klavdya S. Davydovskaya, Vitali V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu
source
location of publication
Zurich
publisher
year of publication
pages
p. 730-733
series
conference name, date
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
conference location
Birmingham, UK
url
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 7 ref
scientific publication
teaduspublikatsioon
TTÜ department
language
inglise
Lebedev, A.A., Davydovskaya, K.S., Kozlovski, V.V., Korolkov, O., Sleptsuk, N., Toompuu, J. Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature // Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 730-733. (Materials science forum ; 963). https://doi.org/10.4028/www.scientific.net/MSF.963.730