Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature
author
Davydovskaya, Klavdya S.
statement of authorship
Alexander A. Lebedev, Klavdya S. Davydovskaya, Vitali V. Kozlovski, Oleg Korolkov, Natalja Sleptsuk, Jana Toompuu
location of publication
Zurich
publisher
year of publication
pages
p. 730-733
conference name, date
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
conference location
Birmingham, UK
subject term
kvartiil
category (general)
category (sub)
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 7 ref
scientific publication
teaduspublikatsioon
classifier
TTÜ department
language
inglise
Lebedev, A.A., Davydovskaya, K.S., Kozlovski, V.V., Korolkov, O., Sleptsuk, N., Toompuu, J. Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperature // Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 730-733. (Materials science forum ; 963).