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Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing

author
statement of authorship
Oleg Korolkov, Vitali V. Kozlovski, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk and Toomas Rang
source
location of publication
Zurich
publisher
year of publication
pages
p. 734-737
series
conference name, date
12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) 2-6 September 2018
conference location
Birmingham, UK
url
ISSN
0255-5476
ISBN
978-303571332-9
notes
Bibliogr.: 9 ref
scientific publication
teaduspublikatsioon
TTÜ department
language
inglise
Reserch Group
Cognitronic lab-on-a-chip research group
Korolkov, O., Kozlovski, V.V., Lebedev, A.A., Toompuu, J., Sleptsuk, N., Rang, T. Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealing // Silicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK. Zurich : Trans Tech Publications, 2019. p. 734-737. (Materials science forum ; 963). https://doi.org/10.4028/www.scientific.net/MSF.963.734