Raman scattering characterization of ion-beam synthesized Mg2Si. 1, Influence of the technological conditions on the formation of the Mg2Si in(100) Si matrix
author
Atanassov, Alexander
Zlateva, Genoveva
Baleva, Mitra
Goranova, Ekaterina
statement of authorship
Alexander Atanassov, Genoveva Zlateva, Mitra Baleva, Ekaterina Goranova, Blagoj Amov, Christo Angelov, Valdek Mikli
source
Plasma processes and polymers
journal volume number month
3
year of publication
pages
2, p. 219-223 : ill
ISSN
1612-8850
notes
Bibliogr.: 6 ref
Atanassov, A., Zlateva, G., Baleva, M., Goranova, E., Amov, B., Angelov, C., Mikli, V. Raman scattering characterization of ion-beam synthesized Mg2Si. 1, Influence of the technological conditions on the formation of the Mg2Si in(100) Si matrix // Plasma processes and polymers (2006) 3, 2, p. 219-223 : ill.