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A theoretically accurate mobility model for drift-diffusion power device simulationVelmre, Enn; Udal, Andres; Kocsis, T.; Masszi, F.16th Nordic Semiconductor Meeting, Laugarvatn, Iceland, June 12-15, 1994 : abstracts1994 / p. 92

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A theoretically accurate mobility model for semiconductor device drift-diffusion simulationVelmre, Enn; Udal, Andres; Kocsis, T.; Masszi, F.Physica scripta1994 / p. 263-267

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Ab inito study of GaN properties using VASP software packageKlopov, Mihhail; Kuusk, Ahto; Velmre, Enn; Udal, AndresBEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia2004 / p. 55-58 : ill

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Anorgaanilised pooljuhtühendid ja elektrit juhtivad polümeerid - üheskoos ja eraldi uute väljundite otsingulÖpik, AndresTeadusmõte Eestis : täppisteadused : [artiklikogumik]2006 / lk. 207-216 : ill https://www.ester.ee/record=b2230239*est

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Atomic structure and dynamics of unusual and wide-gap phase-change chalcogenides : a GeTe2 caseUsuki, Takeshi; Benmore, Chris J.; Tverjanovich, Andrey; Bereznev, Sergei; Khomenko, Maxim; Sokolov, Anton; Fontanari, Daniele; Ohara, Koji; Bokova, Maria; Kassem, Mohammad; Bychkov, EugenePhysica status solidi - rapid research letters2024 / art. 2300482 https://doi.org/10.1002/pssr.202300482

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Chemical treatment of tetrahedrite Cu10Cd2Sb4S13 monograin powderGhisani, Fairouz; Timmo, Kristi; Altosaar, MareGSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts2020 / p. 24 http://fmtdk.ut.ee/wp-content/uploads/2020/01/GSFMT2020.pdf

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Chemical vapour deposition of WS2monolayers [Online resource]Kaupmees, Reelika; Grossberg, Maarja; Krustok, JüriTartu Ülikooli ASTRA projekt PER ASPERA : Funktsionaalsed materjalid ja tehnoloogiad : [4.-5. veebr. 2019, Tartu : teesid]2019 / 1 p http://fmtdk.ut.ee/teesid-2019/

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Comparative study of isothermal grain growth of CdS and CdTe in the presence of halide fluxesHiie, Jaan; Altosaar, Mare; Mellikov, EnnSolid state phenomena1999 / Polycrystalline Semiconductors V : Bulk Materials, Thin Films and Devices : Proceedings of the Fifth International Conference, held in Schwäbisch Gmünd, Germany, September 13-18, 1998, p. 303-308

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Compositionally tunable structure and optical properties of Cu1.85(CdxZn1 − x)1.1SnS4.1 (0 ≤ x ≤ 1) monograin powdersPilvet, Maris; Kauk-Kuusik, Marit; Altosaar, Mare; Grossberg, Maarja; Danilson, Mati; Timmo, Kristi; Mere, Arvo; Mikli, ValdekThin solid films2015 / p. 180-183 : ill http://dx.doi.org/10.1016/j.tsf.2014.10.091

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Configuration-coordinate model and the defect states of semiconductors, CdTe in particularHjelt, Kari; Collan, Heikki; Krustok, Jüri; Mädasson, JaanAnnual report 1994 / Optoelectronics Laboratory, Helsinki University of Technology1995 / p. 50-51

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Deep defect related photoluminescence in heavily doped GuGaTe2Jagomägi, Andri; Krustok, Jüri; Grossberg, Maarja; Danilson, Mati; Raudoja, JaanPhysica status solidi (a)2006 / 5, p. 949-955 : ill http://deepzone3.ttu.ee/~juri.krustok/PDF-s/Deep%20defect%20related%20photoluminescence%20in%20heavily%20doped.pdf

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Device characteristics of CuInSe2 based solar cellsKrustok, Jüri; Danilson, Mati; Jagomägi, Andri; Grossberg, Maarja; Raudoja, JaanThe Fourth International Conference on Advanced Optical Materials and Devices : (AOMD-4) : Tartu, Estonia, July 6-9, 2004 : abstracts2004 / p. 45

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A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, Pavel; Potapov, Alexander; Samsonova, Tatyana; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2011 / p. 1306-1310 : ill https://doi.org/10.1134/S1063782611100101

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Durability performance of semiconductor strain gauges in GFRP laminateHerranen, Henrik; Saar, Tõnis; Gordon, Rauno; Pohlak, Meelis; Lend, HenriProceedings of the 6th ECCOMAS Thematic Conference on Smart Structures and Materials, SMART 2013 : Turin, Italy, June 24-26, 20132013 / p. 1-14 : ill

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journal article EST / journal article ENG

Effects of Ar+ etching of Cu2ZnSnSe4 thin films : An x-ray photoelectron spectroscopy and photoluminescence studyYakushev, Michael V.; Sulimov, Mikhail A.; Skidchenko, Ekaterina; Krustok, JüriJournal of Vacuum Science & Technology B2018 / art. 061208, 8 p. : ill https://doi.org/10.1116/1.5050243 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

journal article EST / journal article ENG

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Energeetika : pooljuhid - otsapidi uueneva energiatehnika küljesLehtla, TõnuHorisont2012 / lk. 34-39 : ill https://artiklid.elnet.ee/record=b2467567*est

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Experimental analysis of the dynamic performance of Si, GaAs and SiC diodesBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasBEC 2012 : 2012 13th Biennial Baltic Electronics Conference : proceedings of the 13th Biennial Baltic Electronics Conference : October 3-5, 2012, Tallinn, Estonia2012 / p. 49-52 : ill

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Fault-tolerant bidirectional series resonant DC-DC converter with minimum number of componentsVinnikov, Dmitri; Chub, Andrii; Korkh, Oleksandr; Malinowski, Mariusz2019 IEEE Energy Conversion Congress and Exposition, ECCE, 2019-09-29 - 2019-10-03, Baltimore, MD, USA2019 / p. 1359–1363 https://doi.org/10.1109/ECCE.2019.8912292

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Glass/ITO/In(O,S)/CuIn(S,Se)2 solar cell with conductive polymer windowKois, Julia; Bereznev, Sergei; Raudoja, Jaan; Mellikov, Enn; Öpik, AndresThe Fourth International Conference on Advanced Optical Materials and Devices : (AOMD-4) : Tartu, Estonia, July 6-9, 2004 : abstracts2004 / p. 44 https://www.sciencedirect.com/science/article/abs/pii/S0927024804003836

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Glass/ITO/In(O,S)/CuIn(S,Se)2 solar cell with conductive polymer window layerKois, Julia; Bereznev, Sergei; Raudoja, Jaan; Mellikov, Enn; Öpik, AndresSolar energy materials and solar cells2005 / p. 657-665 : ill https://www.sciencedirect.com/science/article/abs/pii/S0927024804003836

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Guest editorialMin, MartProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 155-156

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High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modulesColmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on industry applications2015 / p. 4664-4676 : ill http://dx.doi.org/10.1109/TIA.2015.2456422

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Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structuresKurel, Raido; Rang, ToomasAdvanced Computational Methods in Heat Transfer VI2000 / p. 437-444 https://www.witpress.com/elibrary/wit-transactions-on-engineering-sciences/27/4468

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Influence of point defects on physical qualities of semiconductorsAltosaar, Mare; Buschmann, Felix; Erm, Ants; Krustok, Jüri; Kukk, Peeter-Enn; Lõo, A.; Mädasson, Jaan; Tomson, A.Journal of materials and product. technology1991

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Intermediate layer in the metal-silicon carbide contact : investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion weldinSleptšuk, Natalja2012 https://www.amazon.com/Intermediate-Layer-Metal-Silicon-Carbide-Contact/dp/3848422239

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pooljuhid (subject term)

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