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A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC

author
Velmre, Enn
Udal, Andres
statement of authorship
E.Velmre, A.Udal
source
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
location of publication
[S. l.]
publisher
Trans Tech Publications
year of publication
2000
pages
p. 725-728
subject term
ränikarbiid
elektronid
anisotroopia
language
inglise
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 725-728.