Velmre, E., Udal, A. - TalTech teadusportaal

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC

autor

Velmre, Enn

Udal, Andres

vastutusandmed

E.Velmre, A.Udal

allikas

Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1

ilmumiskoht

[S. l.]

kirjastus/väljaandja

Trans Tech Publications

ilmumisaasta

2000

leheküljed

p. 725-728

keel

inglise

Märksõnad ja võtmesõnad

märksõna

ränikarbiid

elektronid

anisotroopia

Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 725-728.