Kropman, D., Mellikov, E., Kärner, T., Laas, T., Medvid, A., Onufrijevs, P., Dauksta, E.

full record print

Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties

author

Kropman, Daniel

Mellikov, Enn

Kärner, Tiit

Laas, Tõnu

Medvid, Arthur

Onufrijevs, Pavels

Dauksta, Edvins

statement of authorship

Daniel Kropman, Enn Mellikov, Tiit Kärner, Tõnu Laas, Arthur Medvid, Pavels Onufrijevs, Edvins Dauksta

source

Solid state phenomena

journal volume number month

Vol. 178/179

year of publication

2011

pages

p. 259-262

ISSN

1012-0394

language

inglise

Märksõnad ja võtmesõnad

keyword

EPR

point defect

Si-SiO2-Si3N4 interface

stress relaxation

Kropman, D., Mellikov, E., Kärner, T., Laas, T., Medvid, A., Onufrijevs, P., Dauksta, E. Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties // Solid state phenomena (2011) Vol. 178/179, p. 259-262.