Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
author
Rashid, Muhammad Haroon
Koel, Ants
Rang, Toomas
Gähwiler, Reto
Grosberg, Martin
Jõemaa, Rauno
statement of authorship
Haroon Rashid, Ants Koel, Toomas Rang, Reto Gähwiler, Martin Grosberg & Rauno Jõemaa
source
Materials and contact characterisation VIII
location of publication
Southampton
publisher
WIT Press
year of publication
2017
pages
p. 235-248 : ill
series
WIT transactions on engineering sciences ; 116
conference name, date
8th International Conference on Computational Methods and Experiments in Materials Characterisation, 21-23 June, 2017
conference location
Tallinn, Estonia
url
https://doi.org/10.2495/MC170241
subject term
pooljuhid
karbiidid
ränikarbiid
elektroonikaaparatuur
Scopus
https://www.scopus.com/sourceid/6000195382
https://www.scopus.com/record/display.uri?eid=2-s2.0-85039063073&origin=inward&txGid=ae51660a8a9b7f5fa98eaa8bca050af1
quartile
Q4
category (general)
Engineering
Tehnika
Chemical engineering
Keemiatehnoloogia
Materials science
Materjaliteadus
Chemistry
Keemia
category (sub)
Engineering. Computational mechanics
Tehnika. Arvutusmehaanika
Chemical engineering. Fluid flow and transfer processes
Keemiatehnoloogia. Vedeliku voolu- ja ülekandeprotsessid
Engineering. Mechanics of materials
Tehnika. Materjalide mehaanika
Materials science. General materials science
Materjaliteadus. Üldine materjaliteadus
Chemistry. Electrochemistry
Keemia. Elektrokeemia
keyword
heterostructures
silicon carbide
3C-SiC
4H-SiC
transmission spectrum
projected device density of states (PDDOS)
ISSN
1746-4471
ISBN
978-1-78466-197-7
notes
Bibliogr.: 24 ref
Open Access
Open Access
scientific publication
teaduspublikatsioon
classifier
3.1
TalTech department
Thomas Johann Seebecki elektroonikainstituut
language
inglise