A three-level voltage-source gate driver for SiC MOSFETs in synchronous rectification mode

statement of authorship
Andreas Giannakis, Daniel A. Philipps, Andrei Blinov, Dimosthenis Peftitsis
publisher
year of publication
pages
6 p
conference name, date
2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), 14-16 June 2023
conference location
Tallinn, Estonia
keyword
SiC MOSFET
overvoltage
ISSN
2166-9546
ISBN
979-8-3503-0004-8
notes
Bibliogr.: 15 ref
scientific publication
teaduspublikatsioon
classifier
3.1
language
inglise
Giannakis, A., Philipps, D., Blinov, A., Peftitsis, D. A three-level voltage-source gate driver for SiC MOSFETs in synchronous rectification mode // 2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG). : IEEE, 2023. 6 p. https://doi.org/10.1109/CPE-POWERENG58103.2023.10227462