Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects
author
statement of authorship
E.Velmre, A.Udal, F.Masszi and E.Nordlander
source
Simulation of semiconductor devices and processes. Vol. 6
location of publication
Wien
publisher
year of publication
pages
p. 340-343: ill
ISBN
978-3-7091-6619-2 (Online)
978-3-7091-7363-3
notes
Bibl.: 7 ref
language
inglise
subject term
keyword
Diode Structure
Conductivity Anisotropy
Bottom Contact
Field Penetration Depth
Mobility Anisotropy
Velmre, E., Udal, A., Masszi, F., Nordlander, E. Investigation of silicon carbide diode structures via numerical simulations including anisotropic effects // Simulation of semiconductor devices and processes. Vol. 6. Wien : Springer, 1995. p. 340-343: ill.