Velmre, E., Udal, A., Verbitski, I. - TalTech Research Portal

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Study of radiative recombination influence in GaN and GaAs bipolar transistor structures

author

Velmre, Enn

Udal, Andres

Verbitski, Irina

statement of authorship

E.Velmre, A.Udal, I.Verbitski

source

BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia

location of publication

Tallinn

publisher

Tallinn University of Technology

year of publication

2004

pages

p. 59-62 : ill

ISBN

9985-59-462-2

notes

Bibliogr.: 21 ref

language

inglise

Märksõnad ja võtmesõnad

subject term

bipolaartransistorid

galliumiühendid

nitriidid

rekombinatsioon

Velmre, E., Udal, A., Verbitski, I. Study of radiative recombination influence in GaN and GaAs bipolar transistor structures // BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Tallinn : Tallinn University of Technology, 2004. p. 59-62 : ill.