Study of radiative recombination influence in GaN and GaAs bipolar transistor structures
autor
vastutusandmed
E.Velmre, A.Udal, I.Verbitski
ilmumiskoht
Tallinn
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 59-62 : ill
ISBN
9985-59-462-2
märkused
Bibliogr.: 21 ref
keel
inglise
Velmre, E., Udal, A., Verbitski, I. Study of radiative recombination influence in GaN and GaAs bipolar transistor structures // BEC 2004 : proceedings of the 9th Biennial Baltic Electronics Conference : October 3-6, 2004, Tallinn, Estonia. Tallinn : Tallinn University of Technology, 2004. p. 59-62 : ill.