Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
author
statement of authorship
A. Koel, T. Rang & G. Rang
source
High performance structure and materials. VI
location of publication
Southampton
publisher
year of publication
pages
p. 439-448 : ill
series
WIT transactions on the built environment ; 124
ISSN
1743-3509
ISBN
978-1-84564-596-0
notes
Bibliogr.: 16 ref
TTÜ department
language
inglise
subject term
keyword
metal semiconductor contacts
interface layer
deep energy levels
DLTS method
Koel, A., Rang, T., Rang, G. Numerical analysis of the influence of deep energy level traps in SiC Schottky structures // High performance structure and materials. VI. Southampton : WIT Press, 2012. p. 439-448 : ill. (WIT transactions on the built environment ; 124).