Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
author
statement of authorship
A. Koel, T. Rang & G. Rang
source
High performance structure and materials. VI
location of publication
Southampton
publisher
year of publication
pages
p. 439-448 : ill
series
WIT transactions on the built environment ; 124
subject term
keyword
metal semiconductor contacts
interface layer
deep energy levels
DLTS method
ISSN
1743-3509
ISBN
978-1-84564-596-0
notes
Bibliogr.: 16 ref
TTÜ department
language
inglise
Koel, A., Rang, T., Rang, G. Numerical analysis of the influence of deep energy level traps in SiC Schottky structures // High performance structure and materials. VI. Southampton : WIT Press, 2012. p. 439-448 : ill. (WIT transactions on the built environment ; 124).