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Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons (title)
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journal article EST
/
journal article ENG
Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Semiconductors
2019
/
p. 975−978
https://doi.org/10.1134/S1063782619070133
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journal article EST
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journal article ENG
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