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Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe (title)
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book article
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Rang, Toomas
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
2012
/
2 p. : ill
book article
2
book article EST
/
book article ENG
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Mikli, Valdek
;
Rang, Toomas
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
2013
/
p. 677-680 : ill
https://doi.org/10.4028/www.scientific.net/MSF.740-742.677
Conference Proceedings at Scopus
Article at Scopus
Conference Proceedings at WOS
Article at WOS
book article EST
/
book article ENG
Number of records 2, displaying
1 - 2
keyword
7
1.
SiC Schottky diodes
2.
Kelvin probe
3.
Kelvin probe method
4.
Schottky diodes
5.
p-type 4H-SiC
6.
SiC JBS diodes
7.
4H-SiC
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