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Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction [Electronic resource] (title)

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Comparison of the power losses in 1700V Si IGBT and SiC MOSFET modules including reverse conduction [Electronic resource]Rabkowski, Jacek; Platek, TadeuszEPE'15 ECCE Europe : 8-10 September 2015, Geneva, Switzerland : 17th European Conference on Power Electronics and Applications2015 / [10] p. : ill. [USB] http://dx.doi.org/10.1109/EPE.2015.7309444

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