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Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties (title)
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journal article
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Volobujeva, Olga
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
Physica B : condensed matter
2009
/
23/24, p. 5153-5155 : ill
journal article
2
book article
Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface properties
Kropman, Daniel
;
Mellikov, Enn
;
Öpik, Andres
;
Lott, Kalju
;
Volobujeva, Olga
;
Kärner, T.
;
Heinmaa, I.
;
Laas, Tõnu
;
Medvid, A.
Radiation Interaction with Materials and its use in Technologies : Kaunas, 24-27.09.2008
2008
/
p. 204-207
book article
Number of records 2, displaying
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keyword
3
1.
Si-SiO2 interface
2.
Si-SiO2-Si3N4 interface
3.
mechanism of changes in CdS properties
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