A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation
statement of authorship
P. A. Ivanov, A. S. Potapov, T. P. Samsonova, O. Korol’kov, and N. Sleptsuk
source
journal volume number month
Vol. 45, 10
year of publication
pages
p. 1306-1310 : ill
subject term
ISSN
1063-7826
notes
Bibliogr.: 13 ref
language
inglise
Ivanov, P.A., Potapov, A.S., Samsonova, T.P., Korolkov, O., Sleptsuk, N. A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation // Semiconductors (2011) Vol. 45, 10, p. 1306-1310 : ill.