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Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate (title)

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book article

Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gateAbashkina, S.; Rimshans, J.; Korolkov, V.I.; Tabarov, T.Automation, simulation & measurement : 3rd biennal conference : Tallinn, Estonia, October 7-11, 1991. Section S, Simulation = Automatiseerimine, modelleerimine ja mõõtmine : 3. rahvusvaheline konverents / Tallinna Tehnikaülikool1992 / p. 83-88: ill https://www.ester.ee/record=b1064031*est

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