Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons
author
statement of authorship
O.M. Korolkov, V.V. Kozlovski, A.A. Lebedev, N. Sleptsuk, J. Toompuu, T. Rang
source
publisher
journal volume number month
vol. 53, 7
year of publication
pages
p. 975−978
subject term
ISSN
1063-7826
notes
Bibliogr.: 14 ref
scientific publication
teaduspublikatsioon
classifier
category (general)
category (sub)
kvartiil
TTÜ department
language
inglise
Korolkov, O., Kozlovski, V., Lebedev, A., Sleptsuk, N., Toompuu, J., Rang, T. Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electrons // Semiconductors (2019) vol. 53, 7, p. 975−978.