Leakage currents in 4H-SiC JBS diodes
statement of authorship
P. A. Ivanov, ... O. Korol’kov and N. Sleptsuk [et al.]
source
journal volume number month
Vol. 46, no. 3
year of publication
pages
p. 397-400 : ill
ISSN
1063-7826
notes
Bibliogr.: 9 ref
Original Russian text: P.A. Ivanov, I.V. Grekhov, A.S. Potapov, O.I. Kon’kov, N.D. Il’inskaya, T.P. Samsonova, O. Korol’kov, N. Sleptsuk, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 3, pp. 411–415
language
inglise
Ivanov, P., Korolkov, O., Sleptšuk, N. et al. Leakage currents in 4H-SiC JBS diodes // Semiconductors (2012) Vol. 46, no. 3, p. 397-400 : ill.