Ivanov, P., Korolkov, O., Sleptšuk, N. et al.

Leakage currents in 4H-SiC JBS diodes

author

Ivanov, Pavel

Korolkov, Oleg

Sleptšuk, Natalja

statement of authorship

P. A. Ivanov, ... O. Korol’kov and N. Sleptsuk [et al.]

source

Semiconductors

journal volume number month

Vol. 46, no. 3

year of publication

2012

pages

p. 397-400 : ill

url

https://link.springer.com/article/10.1134/S106378261203013X

subject term

dioodid

ränikarbiid

kristallistruktuur

defektid

spektroskoopia

pinge (elektrotehnika)

ISSN

1063-7826

notes

Bibliogr.: 9 ref

Original Russian text: P.A. Ivanov, I.V. Grekhov, A.S. Potapov, O.I. Kon’kov, N.D. Il’inskaya, T.P. Samsonova, O. Korol’kov, N. Sleptsuk, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 3, pp. 411–415

language

inglise

Ivanov, P., Korolkov, O., Sleptšuk, N. et al. Leakage currents in 4H-SiC JBS diodes // Semiconductors (2012) Vol. 46, no. 3, p. 397-400 : ill. https://link.springer.com/article/10.1134/S106378261203013X