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Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons

author
statement of authorship
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O.M. Korolkov, N.S. Sleptšuk, J. Toompuu
source
location of publication
[S.l.]
year of publication
pages
p. 49
conference name, date
11th European Conference on Silicon Carbide and Related Materials ECSCRM 2016, September 25-29, 2016
conference location
Halkidiki, Greece
TTÜ department
language
inglise
Lebedev, A., Davydovskaya, K., Kozlovski, V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons // 11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]. [S.l.], 2016. p. 49.